热CVD碳纳米管场致发射三极管的晶体管特性

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1355016

Y. Wong, W. Kang, J. Davidson, W. Hofmeister, S. Wei, J.H. Huang

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引用次数: 0

摘要

本文报道了在三极管放大器结构下CVD生长的碳纳米管场发射体的研究。研究了碳纳米管三极管的直流特性，包括不同V/sub g/下的I/sub a/ vs. V/sub a/。此外，还确定了三极管放大器的跨导、放大系数和阳极电阻等直流参数。结果表明，优化栅极-阳极-阴极间距可以获得更高的放大系数，使得阴极被栅极有效地屏蔽，而阳极仍然收集阴极发射的所有电子。低栅极电压下的高发射电流是实现高跨导的关键。这可以通过在具有公共栅极的三极管结构中优化配置高密度碳纳米管阵列来实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transistor characteristics of thermal CVD carbon nanotubes field emission triode

In this paper, the study of thermal CVD grown CNT field emitters in a triode amplifier configuration is reported. The DC characteristics of the CNT triode are investigated, including I/sub a/ vs. V/sub a/ for different V/sub g/. Moreover, DC parameters such as transconductance, amplification factor and anode resistance of the triode amplifier are determined. It was shown that a higher amplification factor can be achieved with optimum gate-anode-cathode spacing such that the cathode is effectively shielded from the anode by the gate but the anode still collects all electrons emitted from the cathode. High emission current at low gate voltage is key to achieving high transconductance. This can be obtained by optimum configuration of high-density CNTs array in a triode structure with a common gate.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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