K. Tomita, K. Hashimoto, T. Inbe, T. Oashi, K. Tsukamoto, Y. Nishioka, M. Matsuura, T. Eimori, M. Inuishi, I. Miyanaga, M. Nakamura, T. Kishimoto, T. Yamada, K. Eriguchi, H. Yuasa, T. Satake, A. Kajiya, M. Ogura
{"title":"Sub-1 /spl mu/m/sup /高密度嵌入式SRAM技术，适用于100nm代SOC及以后","authors":"K. Tomita, K. Hashimoto, T. Inbe, T. Oashi, K. Tsukamoto, Y. Nishioka, M. Matsuura, T. Eimori, M. Inuishi, I. Miyanaga, M. Nakamura, T. Kishimoto, T. Yamada, K. Eriguchi, H. Yuasa, T. Satake, A. Kajiya, M. Ogura","doi":"10.1109/VLSIT.2002.1015369","DOIUrl":null,"url":null,"abstract":"We have integrated a high speed and high density 6T-SRAM cell (0.998 /spl mu/m/sup 2/) for system-on-a-chip (SOC) using enhanced 100 nm CMOS logic technology. This is achieved by a systematic integration methodology, which includes high-NA ArF lithography, optimized optical proximity correction (OPC) CAD, narrow well isolation, poly-buffered shallow trench isolation (STI), offset spacer transistor, and 9-level Cu interconnect and low-k dielectric technologies with the lithographically scalable SRAM cell design.","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"1216 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Sub-1 /spl mu/m/sup 2/ high density embedded SRAM technologies for 100 nm generation SOC and beyond\",\"authors\":\"K. Tomita, K. Hashimoto, T. Inbe, T. Oashi, K. Tsukamoto, Y. Nishioka, M. Matsuura, T. Eimori, M. Inuishi, I. Miyanaga, M. Nakamura, T. Kishimoto, T. Yamada, K. Eriguchi, H. Yuasa, T. Satake, A. Kajiya, M. Ogura\",\"doi\":\"10.1109/VLSIT.2002.1015369\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have integrated a high speed and high density 6T-SRAM cell (0.998 /spl mu/m/sup 2/) for system-on-a-chip (SOC) using enhanced 100 nm CMOS logic technology. This is achieved by a systematic integration methodology, which includes high-NA ArF lithography, optimized optical proximity correction (OPC) CAD, narrow well isolation, poly-buffered shallow trench isolation (STI), offset spacer transistor, and 9-level Cu interconnect and low-k dielectric technologies with the lithographically scalable SRAM cell design.\",\"PeriodicalId\":103040,\"journal\":{\"name\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"volume\":\"1216 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2002.1015369\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015369","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sub-1 /spl mu/m/sup 2/ high density embedded SRAM technologies for 100 nm generation SOC and beyond
We have integrated a high speed and high density 6T-SRAM cell (0.998 /spl mu/m/sup 2/) for system-on-a-chip (SOC) using enhanced 100 nm CMOS logic technology. This is achieved by a systematic integration methodology, which includes high-NA ArF lithography, optimized optical proximity correction (OPC) CAD, narrow well isolation, poly-buffered shallow trench isolation (STI), offset spacer transistor, and 9-level Cu interconnect and low-k dielectric technologies with the lithographically scalable SRAM cell design.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
