基于碳化硅mosfet的DC-DC变换器的性能改进评价

Haihong Qin, Bin Zhao, W. Xu, Jiaopu Wen, Yangguang Yan
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引用次数: 15

摘要

近年来,碳化硅器件技术发展迅速。碳化硅器件具有导通电阻小、开关时间短等优点。特别是,SiC mosfet正在寻找其在千伏范围内的定位,目前该范围由Si igbt主导。然而,功率转换电路的性能改进并没有被清楚地显示出来。本文将构建一个双晶体管转换器,并对SiC和Si MOSFET转换器在50 kHz开关频率下的功率损耗进行评估和比较。SiC MOSFET变换器的开关频率也将更高。这些问题将在输入电压高达约600VDC、功率吞吐量在千瓦范围内的高频硬开关变换器中进行探讨。给出了SiC MOSFET的隔离栅驱动器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evaluation of performance improvement of Silicon Carbide MOSFETs based DC-DC converter
Recently, the SiC device technology is rapidly progressed. And SiC device is known by its outstanding property, such as lower on-resistance and short switching time. Especially, the SiC MOSFETs are finding their niche in the kilovolt range, which is currently dominated by Si IGBTs. However, the performance improvement of a power conversion circuit has not been clearly shown. A two-transistor converter will be built and the power losses of SiC and Si MOSFET based converter for 50 kHz switching frequency will be evaluated and compared. And higher switching frequency operation of SiC MOSFET based converter will also be observed. These questions will be explored for the class of high-frequency, hard-switched converters with input voltage up to about 600VDC and power throughput in the kilowatt range. The isolated gate driver of the SiC MOSFET is shown.
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