MOVPE生长δ掺杂GaAs的表征

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088498

P. Gurník, P. Beno, R. Srnánek, M. Tlaczala, B. Ściana, L. Harmatha

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引用次数: 0

摘要

电容电压(C-V)技术对单掺杂和双掺杂GaAs (/spl δ /)的分辨是由掺杂剂分布的宽度决定的。实验的C-V谱图表明，杂质在晶格常数的长度尺度上具有空间局域性。用二次离子质谱法评价了掺杂剂的尖锐分布。

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Characterization of delta-doped GaAs grown by MOVPE

The resolution of the capacitance-voltage (C-V) technique on single- and double-delta (/spl delta/)-doped GaAs is shown to be given by the breadth of dopant distribution. The experimental C-V profiles demonstrate that impurities are spatially localized on the length scale of the lattice constant. The sharp distribution of dopants is assessed by the secondary-ion mass spectroscopy.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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