噪声系数为1.8 dB的c波段低直流功率MMIC LNA

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722675

J. Kucera, U. Lott

{"title":"噪声系数为1.8 dB的c波段低直流功率MMIC LNA","authors":"J. Kucera, U. Lott","doi":"10.1109/GAAS.1998.722675","DOIUrl":null,"url":null,"abstract":"A two stage monolithic on chip matched low noise amplifier (LNA) for the frequency range of 5 to 6 GHz has been designed. A 50 /spl Omega/ noise figure of 1.8 dB and an associated gain of 16.5 dB were measured at a DC power dissipation of only 6 mW from a 1 V supply, including the bias circuitry. At 5.5 GHz the input return loss and reverse isolation are better than -10 dB and -35 dB, respectively.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"28 8","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A 1.8 dB noise figure low DC power MMIC LNA for C-band\",\"authors\":\"J. Kucera, U. Lott\",\"doi\":\"10.1109/GAAS.1998.722675\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A two stage monolithic on chip matched low noise amplifier (LNA) for the frequency range of 5 to 6 GHz has been designed. A 50 /spl Omega/ noise figure of 1.8 dB and an associated gain of 16.5 dB were measured at a DC power dissipation of only 6 mW from a 1 V supply, including the bias circuitry. At 5.5 GHz the input return loss and reverse isolation are better than -10 dB and -35 dB, respectively.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"28 8\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722675\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722675","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

设计了一种频率范围为5 ~ 6ghz的两级单片匹配低噪声放大器(LNA)。在1 V电源(包括偏置电路)的直流功耗仅为6 mW的情况下，测量到50 /spl ω /噪声系数为1.8 dB，相关增益为16.5 dB。在5.5 GHz时，输入回波损耗和反向隔离分别优于-10 dB和-35 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 1.8 dB noise figure low DC power MMIC LNA for C-band

A two stage monolithic on chip matched low noise amplifier (LNA) for the frequency range of 5 to 6 GHz has been designed. A 50 /spl Omega/ noise figure of 1.8 dB and an associated gain of 16.5 dB were measured at a DC power dissipation of only 6 mW from a 1 V supply, including the bias circuitry. At 5.5 GHz the input return loss and reverse isolation are better than -10 dB and -35 dB, respectively.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

自引率

0.00%

发文量