基于Ti/Mo/Cu制备150 NM p-HEMT t栅

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" Pub Date : 2010-11-11 DOI:10.1109/CRMICO.2010.5632990

E. Anichenko, E. Erofeev, S. Ishutkin, V. A. Kagadei, K. S. Nosaeva

{"title":"基于Ti/Mo/Cu制备150 NM p-HEMT t栅","authors":"E. Anichenko, E. Erofeev, S. Ishutkin, V. A. Kagadei, K. S. Nosaeva","doi":"10.1109/CRMICO.2010.5632990","DOIUrl":null,"url":null,"abstract":"Technology of manufacturing of 0,15 μm T-gate Ti/Mo/Cu on heterostructure GaAs/AlGaAs/InGaAs using the electron-beam lithography in the tri-layer resist mask 950PMMA/ LOR 5B/ 495PMMA is described in the work.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"97 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Production of 150 NM T-gate on basis of Ti/Mo/Cu for p-HEMT\",\"authors\":\"E. Anichenko, E. Erofeev, S. Ishutkin, V. A. Kagadei, K. S. Nosaeva\",\"doi\":\"10.1109/CRMICO.2010.5632990\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Technology of manufacturing of 0,15 μm T-gate Ti/Mo/Cu on heterostructure GaAs/AlGaAs/InGaAs using the electron-beam lithography in the tri-layer resist mask 950PMMA/ LOR 5B/ 495PMMA is described in the work.\",\"PeriodicalId\":237662,\"journal\":{\"name\":\"2010 20th International Crimean Conference \\\"Microwave & Telecommunication Technology\\\"\",\"volume\":\"97 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 20th International Crimean Conference \\\"Microwave & Telecommunication Technology\\\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2010.5632990\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2010.5632990","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

介绍了利用电子束光刻技术在异质结构GaAs/AlGaAs/InGaAs上制备0.15 μm t栅Ti/Mo/Cu的技术，该技术采用950PMMA/ LOR 5B/ 495PMMA三层掩模。

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Production of 150 NM T-gate on basis of Ti/Mo/Cu for p-HEMT

Technology of manufacturing of 0,15 μm T-gate Ti/Mo/Cu on heterostructure GaAs/AlGaAs/InGaAs using the electron-beam lithography in the tri-layer resist mask 950PMMA/ LOR 5B/ 495PMMA is described in the work.

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2010 20th International Crimean Conference "Microwave & Telecommunication Technology"

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