在选择性阳极氧化铝上集成无源器件

2009 European Microwave Conference (EuMC) Pub Date : 2009-09-01 DOI:10.23919/eumc.2009.5296509

J. Yook, Je-In Yu, Young‐Joon Kim, Young-Se Kwon

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引用次数: 7

摘要

通过选择性阳极氧化铝，设计和制造了各种ipd(集成无源器件)。薄膜工艺用于实现高Q电感器和高密度电容器。所制螺旋电感在2ghz时的Q因子大于25，所制ipd具有良好的射频性能。制备的0.9 GHz LPF和2.45 GHz BPF的IL(插入损耗)分别只有0.38 dB和1.89 dB，且尺寸小。

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Integrated passive devices on the selectively anodized aluminum oxide

By using selectively anodized aluminium, various IPDs (Integrated Passive Devices) are designed and fabricated. Thin-film processes are used to realize high Q inductors and high density capacitors. Q factors of the fabricated spiral inductors have more than 25 at 2 GHz and IPDs fabricated using this inductors have good RF performances. The fabricated 0.9 GHz LPF and 2.45 GHz BPF have only 0.38 dB and 1.89 dB of IL (Insertion Loss) respectively with small size.

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来源期刊

2009 European Microwave Conference (EuMC)

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