技术对Sub-90nm CMOS电路设计和设计方法的影响

R. Puri, T. Karnik, R. Joshi
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引用次数: 2

摘要

仅供教程使用的摘要表单。本教程讨论了在sub-90nm技术中缩放CMOS电路的设计挑战,以及设计它们所需的设计方法,以便产生具有所需功率性能权衡的稳健设计。为了提供所需的性能提升、限制能耗、控制功耗和保持可靠性,维持供电和阈值电压缩放变得越来越困难。这些要求给一系列学科带来了一些困难。在技术方面,问题是我们是否可以继续沿着传统的CMOS缩放路径-减少有效氧化物厚度,提高通道迁移率,并最大限度地减少寄生。在设计方面,研究人员正在探索各种电路设计技术来处理工艺变化、泄漏和软误差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Technology Impacts on Sub-90nm CMOS Circuit Design and Design Methodologies
Summary form only for tutorial. This tutorial discusses design challenges of scaled CMOS circuits in sub-90nm technologies and the design methodologies required to design them in order to produce robust designs with desired power performance trade-off. It is increasingly difficult to sustain supply and threshold voltage scaling to provide the required performance increase, limit energy consumption, control power dissipation, and maintain reliability. These requirements pose several difficulties across a range of disciplines. On the technology front, the question arises whether we can continue along the traditional CMOS scaling path - reduce effective oxide thickness, improve channel mobility, and minimize parasitics. On the design front, researchers are exploring various circuit design techniques to deal with process variation, leakage and soft errors.
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