基于hf1 - xzrxo2的FTJ器件的接口层设计:从原子到阵列

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830462

H. Chiang, J. Wang, Kuan‐Heng Lin, C. Nien, J. Wu, K.-Y. Hsiang, Chih-Piao Chuu, Y.-W. Chen, X. W. Zhang, C. Liu, Tahui Wang, C. -. Wang, M. Lee, M. Chang, C. Chang, T. C. Chen

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引用次数: 2

摘要

通过在铁电隧道结(ftj)中插入1.8nm的Al2O3界面层(IL)，我们首次展示了铁电隧道结(ftj)具有(a)根据测量数据预测的10年保留时间和(b)稳健的耐久性(> 108次循环)和>10倍的通断比。通过物理分析和第一性原理计算，与金属-铁电-铁电-金属(MFM) ftj相比，我们提出的金属-铁电-铁电- il -金属(MFIM) ftj具有更高的正交相(~ 6x)，导致剩余极化(2Pr)，显著提高了保持率和通断比。

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Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array

For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 108 cycles) with the on-off ratio >10× by inserting a 1.8nm Al2O3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (~6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2Pr) which improves the retention and the on-off ratio significantly.

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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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