{"title":"氮化钛涂层改善火山结构硅发射体的电子发射性能","authors":"H. Murata, K. Murakami, M. Nagao","doi":"10.1109/IVNC57695.2023.10188996","DOIUrl":null,"url":null,"abstract":"We have developed a volcano-structured double-gated field emitter array (FEA). High beam focusing have been achieved by precisely arranged gate electrode, however, high current operation have not been achieved. In this study, we applied TiN coating to volcano-structured Si-FEA, which was formed by reactive sputtering of Ti target and Ar/N2 gases. The TiN coated Si-FEA achieved relatively high current of 4.5 mA/1027 tips and short-term stability of 1 mA for 60 min. Therefore, the TiN coating is promising for high current operation of FEA.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"1989 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of Electron Emission Properties of Volcano-Structured Silicon Emitters by Titanium Nitride Coating\",\"authors\":\"H. Murata, K. Murakami, M. Nagao\",\"doi\":\"10.1109/IVNC57695.2023.10188996\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a volcano-structured double-gated field emitter array (FEA). High beam focusing have been achieved by precisely arranged gate electrode, however, high current operation have not been achieved. In this study, we applied TiN coating to volcano-structured Si-FEA, which was formed by reactive sputtering of Ti target and Ar/N2 gases. The TiN coated Si-FEA achieved relatively high current of 4.5 mA/1027 tips and short-term stability of 1 mA for 60 min. Therefore, the TiN coating is promising for high current operation of FEA.\",\"PeriodicalId\":346266,\"journal\":{\"name\":\"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)\",\"volume\":\"1989 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC57695.2023.10188996\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC57695.2023.10188996","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
研制了一种火山构造双门控场发射极阵列(FEA)。利用精确排列的栅电极可以实现高光束聚焦，但无法实现大电流工作。在本研究中，我们将TiN涂层应用于火山结构的Si-FEA，该结构是由Ti靶和Ar/N2气体反应溅射形成的。TiN涂层的Si-FEA具有4.5 mA/1027 tips的相对高电流和1 mA 60 min的短期稳定性，因此，TiN涂层有望用于FEA的大电流运行。
Improvement of Electron Emission Properties of Volcano-Structured Silicon Emitters by Titanium Nitride Coating
We have developed a volcano-structured double-gated field emitter array (FEA). High beam focusing have been achieved by precisely arranged gate electrode, however, high current operation have not been achieved. In this study, we applied TiN coating to volcano-structured Si-FEA, which was formed by reactive sputtering of Ti target and Ar/N2 gases. The TiN coated Si-FEA achieved relatively high current of 4.5 mA/1027 tips and short-term stability of 1 mA for 60 min. Therefore, the TiN coating is promising for high current operation of FEA.
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