ESD-CDM跨功率域故障研究

2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) Pub Date : 2022-06-12 DOI:10.1109/prime55000.2022.9816786

Mihaela-Daniela Dobre, P. Coll, G. Brezeanu

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引用次数: 0

摘要

本文研究了在交叉功率域结构中遇到的静电放电-电荷器件模型(ESD-CDM)现象。重点是在先进技术节点中基于不同几何形状的接地栅nMOS (ggnMOS)器件的保护方法的局限性。考虑的CDM应力水平从500V到2000V不等。该研究基于具有所有设计架构的测试芯片实现。对于推荐的500V CDM应力，通道长度至少增加最小值的50%的ggnMOS结构可以提供良好的保护，并结合120nm-1$\mu$m范围内的任何宽度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Study on ESD-CDM Cross-Power Domain Failures

A study about Electrostatic Discharge-Charge Device Model (ESD-CDM) phenomena met in cross-power domain architectures is presented in this paper. The emphasis will be on the limitations of a protection method based on Grounded Gate nMOS (ggnMOS) device with different geometries in an advanced technology node. The considered CDM stress levels varied from 500V up to 2000V. The investigation is based on a test-chip implementation with all the designed architectures. For the recommended 500V CDM stress, a good protection is offered by a ggnMOS structure with channel length increased with at least 50% of the minimum value, in combination with any width in range of 120nm-1$\mu$m.

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2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)

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