{"title":"一类费米统计分布函数漂移扩散方程的Scharfetter-Gummel格式的修正","authors":"T. Koprucki, M. Kantner, J. Fuhrmann, K. Gartner","doi":"10.1109/NUSOD.2014.6935403","DOIUrl":null,"url":null,"abstract":"Driven by applications in fields like organic semiconductors there is an increased interest in numerical simulations based on drift-diffusion models with general statistical distribution functions. It is important to keep the well known qualitative properties of the Scharfetter-Gummel finite volume scheme, like positivity of solutions, dissipativity and consistency with thermodynamic equilibrium. A proper generalization to general statistical distribution functions is a topic of current research. The paper presents different state-of-the-art approaches to solve this problem. Their issues and advantages are discussed, and their practical performance is evaluated for real device structures.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"On modifications of the Scharfetter-Gummel scheme for drift-diffusion equations with Fermi-like statistical distribution functions\",\"authors\":\"T. Koprucki, M. Kantner, J. Fuhrmann, K. Gartner\",\"doi\":\"10.1109/NUSOD.2014.6935403\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Driven by applications in fields like organic semiconductors there is an increased interest in numerical simulations based on drift-diffusion models with general statistical distribution functions. It is important to keep the well known qualitative properties of the Scharfetter-Gummel finite volume scheme, like positivity of solutions, dissipativity and consistency with thermodynamic equilibrium. A proper generalization to general statistical distribution functions is a topic of current research. The paper presents different state-of-the-art approaches to solve this problem. Their issues and advantages are discussed, and their practical performance is evaluated for real device structures.\",\"PeriodicalId\":114800,\"journal\":{\"name\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2014.6935403\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Numerical Simulation of Optoelectronic Devices, 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2014.6935403","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On modifications of the Scharfetter-Gummel scheme for drift-diffusion equations with Fermi-like statistical distribution functions
Driven by applications in fields like organic semiconductors there is an increased interest in numerical simulations based on drift-diffusion models with general statistical distribution functions. It is important to keep the well known qualitative properties of the Scharfetter-Gummel finite volume scheme, like positivity of solutions, dissipativity and consistency with thermodynamic equilibrium. A proper generalization to general statistical distribution functions is a topic of current research. The paper presents different state-of-the-art approaches to solve this problem. Their issues and advantages are discussed, and their practical performance is evaluated for real device structures.