高分辨率模数转换器技术的总剂量响应比较

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698901

C. Lee, A. Johnston

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引用次数: 21

摘要

两种不同的12位模数转换器技术，CMOS和BiCMOS，来自Burr-Brown的总剂量反应进行了比较。BiCMOS变换器似乎是一个更好的候选空间应用。CMOS器件在高剂量率(HDR)和低剂量率(LDR)下均表现出较大的衰减。外部电压基准可用于adi公司的抗辐射工艺12位转换器，以保持高达1 Mrad(Si)的精度。DATEL的16位混合转换器显示HDR的低故障水平。

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Comparison of total dose responses on high resolution analog-to-digital converter technologies

Two different 12-bit analog-to-digital converter technologies, CMOS and BiCMOS, from Burr-Brown were compared for total dose responses. The BiCMOS converter appears to be a better candidate for space applications. CMOS devices showed larger degradation with both high dose rate (HDR) and low dose rate (LDR). An external voltage reference can be used for a radiation hardened process 12-bit converter from Analog Devices to maintain accuracy up to 1 Mrad(Si). DATEL's 16-bit hybrid converter showed a low failure level with HDR.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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