{"title":"掺杂控制石墨烯器件中量子霍尔电阻平台的精确测量","authors":"D. Chae, Wan-Seop Kim, A. Satrapinski, S. Novikov","doi":"10.1109/CPEM.2016.7540495","DOIUrl":null,"url":null,"abstract":"We report preliminary results of precision measurements of the graphene quantum Hall resistance plateau value with respect to magnetic field, temperature and applied current. Resistance value of SiC graphene Hall device was modulated by chemical doping, heating, and UV irradiation at the ambient condition. Precision measurements for Rh (filing factor v = 2) were then performed with a cryogenic current comparator resistance bridge. Relative deviation from RH (v = 2) less than 30 parts in 109 can be achieved down to 7 T of magnetic field and up to 6 K of temperature with driving current of 19. 37 μA.","PeriodicalId":415488,"journal":{"name":"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Precision measurements of quantum hall resistance plateau in doping-controlled graphene device\",\"authors\":\"D. Chae, Wan-Seop Kim, A. Satrapinski, S. Novikov\",\"doi\":\"10.1109/CPEM.2016.7540495\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report preliminary results of precision measurements of the graphene quantum Hall resistance plateau value with respect to magnetic field, temperature and applied current. Resistance value of SiC graphene Hall device was modulated by chemical doping, heating, and UV irradiation at the ambient condition. Precision measurements for Rh (filing factor v = 2) were then performed with a cryogenic current comparator resistance bridge. Relative deviation from RH (v = 2) less than 30 parts in 109 can be achieved down to 7 T of magnetic field and up to 6 K of temperature with driving current of 19. 37 μA.\",\"PeriodicalId\":415488,\"journal\":{\"name\":\"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CPEM.2016.7540495\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Conference on Precision Electromagnetic Measurements (CPEM 2016)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM.2016.7540495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
我们报告了关于磁场、温度和施加电流的石墨烯量子霍尔电阻平台值的精确测量的初步结果。在常温条件下，通过化学掺杂、加热和紫外照射调制SiC石墨烯霍尔器件的电阻值。然后使用低温电流比较器电阻桥进行Rh(锉化因子v = 2)的精确测量。相对于RH (v = 2)的相对偏差在109中小于30个零件，在驱动电流为19的情况下，可以实现低至7 T的磁场和高至6 K的温度。37个μ。
Precision measurements of quantum hall resistance plateau in doping-controlled graphene device
We report preliminary results of precision measurements of the graphene quantum Hall resistance plateau value with respect to magnetic field, temperature and applied current. Resistance value of SiC graphene Hall device was modulated by chemical doping, heating, and UV irradiation at the ambient condition. Precision measurements for Rh (filing factor v = 2) were then performed with a cryogenic current comparator resistance bridge. Relative deviation from RH (v = 2) less than 30 parts in 109 can be achieved down to 7 T of magnetic field and up to 6 K of temperature with driving current of 19. 37 μA.
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