RTS diagnostics of source-drain (edge?) related defects in submicron n-MOSFETs

In this paper,for the first time, a systematic study of the Random Telegraph Signal (RTS)jlitctuations in submicron W-array n-MOSFEI's is reported. It is shown that besides the classical channel-related RTS another type ocCurs, which is associated with the source or drain contact. Secondly, a new way of measuring the RTS is introduced for such signals, whereby the transistor is biased in the forward drain-substrate diode configuration. The available experimental evidence strongly suggests that the underlying oxide defects are lying in the transition region between the gate oxide and the field oxide, i.e. at the bird's beak of the structure.