Takahide Tanaka, M. Yamaji, A. Jonishi, H. Ohashi, H. Sumida
{"title":"一种新型小型化HVIC,具有高ESD耐受性","authors":"Takahide Tanaka, M. Yamaji, A. Jonishi, H. Ohashi, H. Sumida","doi":"10.23919/ISPSD.2017.7988947","DOIUrl":null,"url":null,"abstract":"To achieve a downsized high voltage integrated circuit (HVIC) with high electrostatic discharge (ESD) tolerance, we have proposed the improved self-shielding technique in which a high voltage junction termination (HVJT) diode works as a protection diode of high voltage Neh MOSFETs. This new technique is more effective not only in improving ESD tolerance but also in downsizing.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A new downsized HVIC with high ESD tolerance\",\"authors\":\"Takahide Tanaka, M. Yamaji, A. Jonishi, H. Ohashi, H. Sumida\",\"doi\":\"10.23919/ISPSD.2017.7988947\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To achieve a downsized high voltage integrated circuit (HVIC) with high electrostatic discharge (ESD) tolerance, we have proposed the improved self-shielding technique in which a high voltage junction termination (HVJT) diode works as a protection diode of high voltage Neh MOSFETs. This new technique is more effective not only in improving ESD tolerance but also in downsizing.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988947\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988947","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
To achieve a downsized high voltage integrated circuit (HVIC) with high electrostatic discharge (ESD) tolerance, we have proposed the improved self-shielding technique in which a high voltage junction termination (HVJT) diode works as a protection diode of high voltage Neh MOSFETs. This new technique is more effective not only in improving ESD tolerance but also in downsizing.