电容式传感器接口与精度参考

Ruimin Yang, M. Pertijs, S. Nihtianov, Peter Haak
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引用次数: 6

摘要

针对先进工业应用中基于电容传感器的位移测量,研究了高精度电容测量技术。分析了电容传感器接口(CSI)的接口结构和参考文献,它们决定了电容测量的精度。讨论了使用不同类型引用的利弊。最后,为了验证分析结果,给出了一个原型集成电路并进行了验证。该原型在10 ms转换时间内实现了17.5位的分辨率,同时从3.3 V电源消耗230 μA。测得界面的热漂移为~6 ppm/°C。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Capacitive sensor interface with precision references
This paper presents an investigation on high-precision capacitance measurement techniques which are aimed for capacitive-sensor-based displacement measurement in advanced industrial applications. The paper analyzes the interface structure and the references used in a capacitive sensor interface (CSI), which define the precision of the capacitance measurement. The trade-offs of using different types of references are discussed. Finally, to validate the analysis, a prototype IC is presented and qualified. This prototype achieves a resolution of 17.5 bit for 10 ms conversion time, while consuming 230 μA from a 3.3 V supply. The measured thermal drift of the interface is ~6 ppm/°C.
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