利用界面错配位错阵列生长模式在InP衬底上生长高铟含量InGaSb

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930345

F. F. Ince, A. T. Newell, K. Reilly, S. Seth, T. Rotter, A. Mansoori, S. Addamane, D. Shima, L. Miroshnik, B. Rummel, A. Li, T. Sinno, S.M. Han, G. Balakrishnan

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摘要

我们采用界面错配位错生长模式，在InP上生长In0.53Ga0.47Sb。生长是通过使用中间InGaAs层和实现As对Sb阴离子交换来实现的。表征结果表明形成了一个界面错配位错阵列，但后处理层表现出明显的相偏析。

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Growth of high Indium Percentage InGaSb on InP substrates using the interfacial misfit dislocation array growth mode

We present the growth of In0.53Ga0.47Sb on InP using the interfacial misfit dislocation growth mode. The growth is performed by using an intermediate InGaAs layer and achieving an As for Sb anion exchange. Characterization results show the formation of an interfacial misfit dislocation array, however the epilayer shows significant phase segregation.

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2022 Compound Semiconductor Week (CSW)

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