变形银及银镓合金的电子显微结构

M. M. Hutchison, R. Honeycombe
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引用次数: 2

摘要

摘要稳定银镓固溶体的层错能随溶质浓度的增加而线性降低,而形成晶胞结构所需的应变则线性增加。研究了2% Ga合金在变形过程中产生的四面体堆积缺陷。在第一次观察到细胞结构的菌株中,这些四面体的分布、生产速度和最大尺寸都发生了转变。然而,该应变与合金的应力应变曲线之间没有相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Electron Microstructure of Deformed Silver and Silver-Gallium Alloys
AbstractThe stacking-fault energies of stable silver-gallium solid solutions decrease linearly with increased solute concentration and the strain required to form a cell structure increases linearly. Tetrahedral stacking-fault defects, produced during deformation, were studied in the 2% Ga alloy. A transition was noted in the distribution, the rate of production, and the maximum size of these tetrahedra at the strain at which a cell structure was first observed. However, there was no correlation between this strain and the stress vs. strain curves of the alloys.
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