用于中压驱动的级联h桥和模块化多电平变换器拓扑结构的研究和比较

A. Marzoughi, R. Burgos, D. Boroyevich, Yaosuo Xue
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引用次数: 51

摘要

本文研究了用于中压大功率工业电机驱动的级联h桥(CHB)和模块化多电平变换器(MMC)拓扑结构的设计过程。本设计采用1.7 kv绝缘栅双极晶体管(IGBT)技术。建立了考虑泄漏参数对变换器设计影响的多脉冲变压器模型。此外,在三种不同电压水平(4.16,6.9和13.8 kv)和三种不同功率水平(1-,3-和5-MVA)下,MMC和CHB拓扑之间也进行了比较,从电容要求,二极管前端和逆变级损耗,半导体额定功率和结温以及零件数量等几个角度进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation and comparison of cascaded H-bridge and modular multilevel converter topologies for medium-voltage drive application
This paper investigates the design procedure of cascaded H-bridge (CHB) and modular multilevel converter (MMC) topologies for medium-voltage and high-power industrial motor drive application. The design is performed using 1.7-kV insulated gate bipolar transistor (IGBT) technology. A model is derived for multi-pulse transformer to take into account its leakage parameters' effect on converter design. Also a comparison is done between MMC and CHB topologies at three different voltage levels: 4.16-, 6.9- and 13.8-kV and three different power levels: 1-, 3- and 5-MVA Comparison is done from several points of view like capacitance requirements, diode front-end and inverter stage losses, semiconductor rating and junction temperature and parts count.
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