{"title":"一种新的GaN-HEMT非线性模型改进方法","authors":"E. Torres-Rios, C. Saavedra","doi":"10.1109/LASCAS.2014.6820247","DOIUrl":null,"url":null,"abstract":"The analysis of the nonlinear charge bias dependence according to the input power, with respect to the intermodulation distortion (IMD) product for a GaN-HEMT, is presented. The results obtained from the analysis of the two-tone measurements, are used to determine the GaN-HEMT model deficiencies. An extrinsic non-linear capacitance element is added to improve the accuracy of the core compact model. The simplicity of the measurement procedure and data analysis, makes this a suitable methodology for a good non-linear characterization for GaN-HEMT. A comparison between simulated and experimental data is presented over a Lm = 08μm GaN-HEMT under different bias and input power conditions to validated the proposed model.","PeriodicalId":235336,"journal":{"name":"2014 IEEE 5th Latin American Symposium on Circuits and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A new compact nonlinear model improvement methodology for GaN-HEMT\",\"authors\":\"E. Torres-Rios, C. Saavedra\",\"doi\":\"10.1109/LASCAS.2014.6820247\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The analysis of the nonlinear charge bias dependence according to the input power, with respect to the intermodulation distortion (IMD) product for a GaN-HEMT, is presented. The results obtained from the analysis of the two-tone measurements, are used to determine the GaN-HEMT model deficiencies. An extrinsic non-linear capacitance element is added to improve the accuracy of the core compact model. The simplicity of the measurement procedure and data analysis, makes this a suitable methodology for a good non-linear characterization for GaN-HEMT. A comparison between simulated and experimental data is presented over a Lm = 08μm GaN-HEMT under different bias and input power conditions to validated the proposed model.\",\"PeriodicalId\":235336,\"journal\":{\"name\":\"2014 IEEE 5th Latin American Symposium on Circuits and Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 5th Latin American Symposium on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LASCAS.2014.6820247\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 5th Latin American Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2014.6820247","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new compact nonlinear model improvement methodology for GaN-HEMT
The analysis of the nonlinear charge bias dependence according to the input power, with respect to the intermodulation distortion (IMD) product for a GaN-HEMT, is presented. The results obtained from the analysis of the two-tone measurements, are used to determine the GaN-HEMT model deficiencies. An extrinsic non-linear capacitance element is added to improve the accuracy of the core compact model. The simplicity of the measurement procedure and data analysis, makes this a suitable methodology for a good non-linear characterization for GaN-HEMT. A comparison between simulated and experimental data is presented over a Lm = 08μm GaN-HEMT under different bias and input power conditions to validated the proposed model.