Hybrid CMOS-OxRAM based 4T-2R NVSRAM with efficient programming scheme

In this paper, we present an OxRAM based compact 4T-2R NVSRAM design with a novel efficient programming scheme to achieve low-power and low area footprint. 3 nm thick HfOx based OxRAM devices and 90 nm CMOS technology node were used for all simulations. Our proposed 4T-2R NVSRAM is programmed using a two cycle write process and is implemented for real-time non-volatility rather than last-bit, or power-down non-volatility. We also show that by carefully choosing the OxRAM programmed resistance levels the pull-down NMOS transitor size, and NVSRAM programming energy can be further reduced by a factor of 3x and 4x respectively.