中子辐射下测试算法对sram应力效应的评价

2012 IEEE 18th International On-Line Testing Symposium (IOLTS) Pub Date : 2012-06-27 DOI:10.1109/IOLTS.2012.6313853

G. Tsiligiannis, L. Dilillo, A. Bosio, P. Girard, A. Todri, A. Virazel, A. Touboul, F. Wrobel, F. Saigné

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引用次数: 15

摘要

随着晶体管尺寸的缩小，电子系统对软误差的可靠性是非常关键的。最近的许多工作已经定义了sram在保持模式(静态)和运行状态(动态)下的辐射误差率。本文评估了运行测试算法对中子辐射下sram的影响，以确定sram的应力因子。我们展示的结果是基于在瑞典乌普萨拉的TSL设施使用准单能中子束进行的实验。测试算法的评估是基于计算出的设备SEU截面。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Evaluation of test algorithms stress effect on SRAMs under neutron radiation

Electronic system reliability over soft errors is very critical as the transistor size shrinks. Many recent works have defined the device error rate under radiation for SRAMs in hold mode (static) and during operation (dynamic). This paper evaluates the impact of running test algorithms on SRAMs exposed to neutron radiation in order to define their stressing factor. The results that we show are based on experiments performed at the TSL facility in Uppsala, Sweden using a Quasi-Monoenergetic neutron beam. The evaluation of the test algorithms is based on the calculated device SEU cross section.

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2012 IEEE 18th International On-Line Testing Symposium (IOLTS)

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