{"title":"GaN hemt高频隔离DC-DC变换器","authors":"M. Zdanowski, Kamil Kozdrój, J. Rąbkowski","doi":"10.1109/PAEE.2017.8009023","DOIUrl":null,"url":null,"abstract":"This paper presents a 325 to 24 V, 1 kW isolated uni-directional DC-DC converter, build with Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs) switching at frequencies of up to 250 kHz. The system is designed by means of LTspice simulations using precise device models. Primarily, a problem of overvoltage across HEMTs is studied, optimal selection of RC snubbers is presented and, finally, verified by a series of experimental tests. Presented waveforms of the drain - source voltage show significant reduction of voltage overshoots and change of resonant frequency values. Paper also presents results of laboratory tests, including specific waveforms and power loss/efficiency measurements for switching frequency range from 100 kHz to 250 kHz.","PeriodicalId":397235,"journal":{"name":"2017 Progress in Applied Electrical Engineering (PAEE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High-frequency isolated DC-DC converter with GaN HEMTs\",\"authors\":\"M. Zdanowski, Kamil Kozdrój, J. Rąbkowski\",\"doi\":\"10.1109/PAEE.2017.8009023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 325 to 24 V, 1 kW isolated uni-directional DC-DC converter, build with Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs) switching at frequencies of up to 250 kHz. The system is designed by means of LTspice simulations using precise device models. Primarily, a problem of overvoltage across HEMTs is studied, optimal selection of RC snubbers is presented and, finally, verified by a series of experimental tests. Presented waveforms of the drain - source voltage show significant reduction of voltage overshoots and change of resonant frequency values. Paper also presents results of laboratory tests, including specific waveforms and power loss/efficiency measurements for switching frequency range from 100 kHz to 250 kHz.\",\"PeriodicalId\":397235,\"journal\":{\"name\":\"2017 Progress in Applied Electrical Engineering (PAEE)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Progress in Applied Electrical Engineering (PAEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PAEE.2017.8009023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Progress in Applied Electrical Engineering (PAEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PAEE.2017.8009023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-frequency isolated DC-DC converter with GaN HEMTs
This paper presents a 325 to 24 V, 1 kW isolated uni-directional DC-DC converter, build with Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs) switching at frequencies of up to 250 kHz. The system is designed by means of LTspice simulations using precise device models. Primarily, a problem of overvoltage across HEMTs is studied, optimal selection of RC snubbers is presented and, finally, verified by a series of experimental tests. Presented waveforms of the drain - source voltage show significant reduction of voltage overshoots and change of resonant frequency values. Paper also presents results of laboratory tests, including specific waveforms and power loss/efficiency measurements for switching frequency range from 100 kHz to 250 kHz.
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