无线局域网高频集成电路技术的比较

[1992] Proceedings IEEE Conference on Wireless LAN Implementation Pub Date : 1992-09-17 DOI:10.1109/CWLAN.1992.275719

L. Reynolds, P. Katzin

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引用次数: 6

摘要

对商用高频IC晶圆制造工艺在2.4 GHz和5.8 GHz新兴无线局域网应用中的低成本、高性能射频前端的适用性进行了综述。比较了GaAs MESFET、GaAs异质结构双极跃迁(HBT)、GaAs高电子迁移率晶体管(HEMT)、Si双极结晶体管(BJT)和Si BiCMOS工艺的晶圆制造成本、成品率、集成密度、直流功耗和电性能。讨论了代表性的射频框图以及关键性能和接口要求。总结了适用的FCC法规、调制方法和芯片封装问题。

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A comparison of high frequency IC technologies for wireless LANs

Commercially available high-frequency IC wafer fabrication processes are reviewed for their applicability to low-cost, high-performance RF front ends for emerging wireless LAN applications at 2.4 and 5.8 GHz. Wafer fabrication cost, yield, integration density, DC power consumption and electrical performance are compared for GaAs MESFET, GaAs heterostructure bipolar transition (HBT), GaAs high-electron-mobility transistor (HEMT), Si bipolar-junction transistor (BJT), and Si BiCMOS processes. Representative RF block diagrams and key performance and interface requirements are discussed. Applicable FCC regulations, modulation methods, and chip packaging issues are summarized.<>

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来源期刊

[1992] Proceedings IEEE Conference on Wireless LAN Implementation

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