{"title":"用于模拟和神经形态计算的TFTs的工程电流-电压线性度","authors":"E. Bestelink, O. de Sagazan, R. Sporea","doi":"10.1109/IFETC49530.2021.9580521","DOIUrl":null,"url":null,"abstract":"Many emerging analog and neuromorphic applications would benefit from a fully linear dependence of a transistor's output on its input for reduced distortion and facile design of linear functions. We show how a new TFT structure, the multimodal transistor, can achieve a linearly dependent drain current in saturation (constant transconductance) with direct proportionality over a large range of input voltages.","PeriodicalId":133484,"journal":{"name":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Engineering current-voltage linearity in TFTs for analog and neuromorphic computing\",\"authors\":\"E. Bestelink, O. de Sagazan, R. Sporea\",\"doi\":\"10.1109/IFETC49530.2021.9580521\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Many emerging analog and neuromorphic applications would benefit from a fully linear dependence of a transistor's output on its input for reduced distortion and facile design of linear functions. We show how a new TFT structure, the multimodal transistor, can achieve a linearly dependent drain current in saturation (constant transconductance) with direct proportionality over a large range of input voltages.\",\"PeriodicalId\":133484,\"journal\":{\"name\":\"2021 IEEE International Flexible Electronics Technology Conference (IFETC)\",\"volume\":\"95 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Flexible Electronics Technology Conference (IFETC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFETC49530.2021.9580521\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Flexible Electronics Technology Conference (IFETC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFETC49530.2021.9580521","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Engineering current-voltage linearity in TFTs for analog and neuromorphic computing
Many emerging analog and neuromorphic applications would benefit from a fully linear dependence of a transistor's output on its input for reduced distortion and facile design of linear functions. We show how a new TFT structure, the multimodal transistor, can achieve a linearly dependent drain current in saturation (constant transconductance) with direct proportionality over a large range of input voltages.