Chia-You Liu, Y. Chuang, C. Tai, H. Kao, K.‐Y. Tien, Jiun-Yun Li
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High-performance GeSn Electronic Devices and spin-orbit coupling in GeSn/Ge heterostructures
GeSn is a promising material for high-performance electronic and photonic devices. In this work, we present our recent achievements on high electron mobility in GeSn n-MOSFETs, an extremely low contact resistivity in metal/n-GeSn junctions, and a high tunneling current density in GeSn Esaki diodes with large peak-to-valley current ratios. Last, we present the first two-dimensional hole gas in the undoped GeSn/Ge heterostructures with strong spin-orbit coupling (SOC) effects, which is tunable by top gating.
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