基于mems的压电微悬臂梁采用LaNiO3缓冲PZT薄膜

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393381

T. Kobayashi, R. Kondo, K. Nakamura, M. Ichiki, R. Maeda

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引用次数: 2

摘要

采用微机电系统(MEMS)微加工工艺，利用LaNiO3 (LNO)缓冲PZT薄膜制备了压电微悬臂梁。采用Pt/Ti/LNO/PZT/LNO/Pt/Ti/SiO2或Pt/Ti/PZT/Pt/Ti/SiO2多层沉积在SOI晶片上制备微悬臂梁。采用MEMS微加工工艺对PZT薄膜进行了降解。我们发现LNO薄膜可以避免这种退化。利用LNO缓冲PZT薄膜对微悬臂梁进行直流驱动，形成了对称的蝴蝶曲线。LNO缓冲PZT薄膜的横向压电常数(-d31 = 120 pm/V)高于无LNO缓冲PZT薄膜的横向压电常数(70 pm/V)。

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MEMS-based piezoelectric micro cantilever using LaNiO3 buffered PZT thin film

We have fabricated piezoelectric micro cantilevers using LaNiO3 (LNO) buffered PZT thin film through microelectromechanical systems (MEMS) micro fabrication process. The micro cantilevers have been fabricated from Pt/Ti/LNO/PZT/LNO/Pt/Ti/SiO2 or Pt/Ti/PZT/Pt/Ti/SiO2 multilayers deposited on SOI wafers. The PZT thin films without LNO thin films were degraded through the MEMS micro fabrication process. We have found that the LNO thin films can avoid the degradation. DC actuation of the micro cantilevers using LNO buffered PZT thin films has resulted in symmetric butterfly curve. The transverse piezoelectric constant of LNO buffered PZT thin films (-d31 = 120 pm/V) is higher than that of the PZT thin films without LNO thin films (70 pm/V).

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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