BSIM-IMG:完全耗尽技术的交钥匙紧凑型模型

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-12-01 DOI:10.1109/SOI.2012.6404352

C. Hu, A. Niknejad, V. Sriramkumar, D. Lu, Y. Chauhan, M. Kahm, A. Sachid

{"title":"BSIM-IMG:完全耗尽技术的交钥匙紧凑型模型","authors":"C. Hu, A. Niknejad, V. Sriramkumar, D. Lu, Y. Chauhan, M. Kahm, A. Sachid","doi":"10.1109/SOI.2012.6404352","DOIUrl":null,"url":null,"abstract":"□ BSIM-IMG is a Turnkey, Production Ready model □ Will be submitted to the CMC for standardization □ Physical, Scalable Core Model for FDSOI devices □ Plethora of Real Device Effects modeled □ Advanced Device Effects — Quantum, Back-gate bias, Self-heating □ Validated on Hardware Data from two FDSOI/ UTBSOI technologies □ Available in major EDA tools.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"BSIM-IMG: A Turnkey compact model for fully depleted technologies\",\"authors\":\"C. Hu, A. Niknejad, V. Sriramkumar, D. Lu, Y. Chauhan, M. Kahm, A. Sachid\",\"doi\":\"10.1109/SOI.2012.6404352\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"□ BSIM-IMG is a Turnkey, Production Ready model □ Will be submitted to the CMC for standardization □ Physical, Scalable Core Model for FDSOI devices □ Plethora of Real Device Effects modeled □ Advanced Device Effects — Quantum, Back-gate bias, Self-heating □ Validated on Hardware Data from two FDSOI/ UTBSOI technologies □ Available in major EDA tools.\",\"PeriodicalId\":306839,\"journal\":{\"name\":\"2012 IEEE International SOI Conference (SOI)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2012.6404352\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404352","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

□BSIM-IMG是一个可交付的、可生产的模型;□将提交给CMC进行标准化;□FDSOI器件的物理、可扩展核心模型;□大量真实器件效应建模;□先进器件效应-量子、后门偏置、自加热;□在两种FDSOI/ UTBSOI技术的硬件数据上进行验证;□可用于主要EDA工具。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

BSIM-IMG: A Turnkey compact model for fully depleted technologies

□ BSIM-IMG is a Turnkey, Production Ready model □ Will be submitted to the CMC for standardization □ Physical, Scalable Core Model for FDSOI devices □ Plethora of Real Device Effects modeled □ Advanced Device Effects — Quantum, Back-gate bias, Self-heating □ Validated on Hardware Data from two FDSOI/ UTBSOI technologies □ Available in major EDA tools.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE International SOI Conference (SOI)

自引率

0.00%

发文量