W. Ciccognani, F. Giannini, E. Limit, P. Longhi, M.A. Nanni, A. Serino, C. Lanzieri, M. Peroni, P. Romanini, V. Camarchia, M. Pirola, G. Ghione
{"title":"GaN器件技术:制造、表征、建模和验证","authors":"W. Ciccognani, F. Giannini, E. Limit, P. Longhi, M.A. Nanni, A. Serino, C. Lanzieri, M. Peroni, P. Romanini, V. Camarchia, M. Pirola, G. Ghione","doi":"10.1109/COMITE.2008.4569884","DOIUrl":null,"url":null,"abstract":"Gallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and verification of different families of high efficiency, high- power devices manufactured at SELEX Sistemi Integrati are reported. Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena.","PeriodicalId":306289,"journal":{"name":"2008 14th Conference on Microwave Techniques","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"GaN Device Technology: Manufacturing, Characterization, Modelling and Verification\",\"authors\":\"W. Ciccognani, F. Giannini, E. Limit, P. Longhi, M.A. Nanni, A. Serino, C. Lanzieri, M. Peroni, P. Romanini, V. Camarchia, M. Pirola, G. Ghione\",\"doi\":\"10.1109/COMITE.2008.4569884\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and verification of different families of high efficiency, high- power devices manufactured at SELEX Sistemi Integrati are reported. Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena.\",\"PeriodicalId\":306289,\"journal\":{\"name\":\"2008 14th Conference on Microwave Techniques\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 14th Conference on Microwave Techniques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMITE.2008.4569884\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 14th Conference on Microwave Techniques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMITE.2008.4569884","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaN Device Technology: Manufacturing, Characterization, Modelling and Verification
Gallium Nitride's superior physical properties, in comparison with other semiconductors, make GaNHEMT active devices a prime candidate in the implementation of next generation transmitters for radar systems, 3G/4G base stations and WiMAX. In this contribution, the characterization, modelling and verification of different families of high efficiency, high- power devices manufactured at SELEX Sistemi Integrati are reported. Process, characterization and modelling phases are analyzed to improve and refine the technology's fabrication techniques, thermal degradation issues and dispersion phenomena.