用微拉曼光谱和发射显微镜研究硅化钛谱线的可靠性

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) Pub Date : 1997-10-01 DOI:10.1109/RELPHY.1998.670461

I. De Wolf, D. Howard, M. Rasras, A. Lauwers, K. Maex, G. Groeseneken, H. Maes

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引用次数: 9

摘要

利用微拉曼光谱和发射显微镜研究了0.25 /spl mu/m宽TiSi/ sub2 /线的晶体相。结果表明，这些技术允许对TiSi/ sub2 /的局部相位进行无损映射。结果表明，这些线路的电阻变化与线路中局部出现ti /sub 2/高电阻率C49相有直接关系。

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A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 /spl mu/m wide TiSi/sub 2/ lines. It is shown that these techniques allow nondestructive mapping of the local phase of TiSi/sub 2/. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi/sub 2/ in the lines.

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来源期刊

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

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