{"title":"半绝缘GaAs衬底中α粒子诱导的软误差机制","authors":"Y. Umemoto, N. Matsunaga, K. Mitsusada","doi":"10.1109/RELPHY.1988.23435","DOIUrl":null,"url":null,"abstract":"The primary mechanism which causes alpha-particle-induced soft error in GaAs ICs is clarified. A description is given of a charge-collection model that includes a bipolar mechanism. It is shown that mechanism causes about 90% of the total collected charge in the n-i-n isolation structure and that suppressing it is the most effective way to prevent soft error in GaAs ICs. Experimental results are presented and shown to agree with predictions based on the model.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Alpha-particle-induced soft-error mechanism in semi-insulating GaAs substrate\",\"authors\":\"Y. Umemoto, N. Matsunaga, K. Mitsusada\",\"doi\":\"10.1109/RELPHY.1988.23435\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The primary mechanism which causes alpha-particle-induced soft error in GaAs ICs is clarified. A description is given of a charge-collection model that includes a bipolar mechanism. It is shown that mechanism causes about 90% of the total collected charge in the n-i-n isolation structure and that suppressing it is the most effective way to prevent soft error in GaAs ICs. Experimental results are presented and shown to agree with predictions based on the model.<<ETX>>\",\"PeriodicalId\":102187,\"journal\":{\"name\":\"26th Annual Proceedings Reliability Physics Symposium 1988\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th Annual Proceedings Reliability Physics Symposium 1988\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1988.23435\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th Annual Proceedings Reliability Physics Symposium 1988","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1988.23435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Alpha-particle-induced soft-error mechanism in semi-insulating GaAs substrate
The primary mechanism which causes alpha-particle-induced soft error in GaAs ICs is clarified. A description is given of a charge-collection model that includes a bipolar mechanism. It is shown that mechanism causes about 90% of the total collected charge in the n-i-n isolation structure and that suppressing it is the most effective way to prevent soft error in GaAs ICs. Experimental results are presented and shown to agree with predictions based on the model.<>
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