在轴向Si(001)衬底上生长的中红外sb基带间激光器

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930402

A. Remis, D. Díaz-Thomas, L. M. Bartolomé, M. Rio-Calvo, A. Gilbert, G. Boissier, A. Baranov, J. Rodriguez, L. Cerutti, É. Tournié

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引用次数: 0

摘要

本文报道了在轴向硅衬底上生长的基于GaSb的带间激光器，工作在温度以上的连续波中，发射波长在2 ~ 5 μm之间。我们将介绍激光特性与有源区的设计的依赖关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mid-infrared Sb-based interband lasers grown on on-axis Si (001) substrates

We report on GaSb based interband lasers grown on on-axis silicon substrate working in continuous wave above temperature and emitting between 2 and 5 μm. We will present the dependance of the laser properties with the design of the active regions.

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2022 Compound Semiconductor Week (CSW)

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