利用漏电流减小技术提高rf - dc整流器的动态范围

M. Mahmoud, G. Fahmy, A. Abdel-Rahman, A. Allam, M. Abo-Zahhad, H. Jia, R. Pokharel
{"title":"利用漏电流减小技术提高rf - dc整流器的动态范围","authors":"M. Mahmoud, G. Fahmy, A. Abdel-Rahman, A. Allam, M. Abo-Zahhad, H. Jia, R. Pokharel","doi":"10.1109/JAC-ECC48896.2019.9051316","DOIUrl":null,"url":null,"abstract":"In this paper, the dynamic range of the conventional differential drive rectifier is enhanced based on leakage current reduction technique, to solve the narrow dynamic range problem of the input power and improve the output rectifier performance. The proposed design uses auxiliary transistors to control the conductivity of the rectifying PMOS devices dynamically to reduce the reverse leakage current. Post layout simulations have been performed using 0.18 μm CMOS technology at 402 MHz with 10kΩ load resistor. The proposed rectifier increases the range of the RF input power about ten times compared to a conventional rectifier's dynamic range and reduces the reverse leakage current from ‒98 μA to ‒22 μA. It also boosts the output average voltage at high input power. In addition, the developed rectifier exhibits good performance over wide band of input frequencies up to 2.4 GHz. The proposed rectifier has a small area of about 0.19 mm2.","PeriodicalId":351812,"journal":{"name":"2019 7th International Japan-Africa Conference on Electronics, Communications, and Computations, (JAC-ECC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancing Dynamic Range of RF-to-DC Rectifier using Leakage Current Reduction Technique\",\"authors\":\"M. Mahmoud, G. Fahmy, A. Abdel-Rahman, A. Allam, M. Abo-Zahhad, H. Jia, R. Pokharel\",\"doi\":\"10.1109/JAC-ECC48896.2019.9051316\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the dynamic range of the conventional differential drive rectifier is enhanced based on leakage current reduction technique, to solve the narrow dynamic range problem of the input power and improve the output rectifier performance. The proposed design uses auxiliary transistors to control the conductivity of the rectifying PMOS devices dynamically to reduce the reverse leakage current. Post layout simulations have been performed using 0.18 μm CMOS technology at 402 MHz with 10kΩ load resistor. The proposed rectifier increases the range of the RF input power about ten times compared to a conventional rectifier's dynamic range and reduces the reverse leakage current from ‒98 μA to ‒22 μA. It also boosts the output average voltage at high input power. In addition, the developed rectifier exhibits good performance over wide band of input frequencies up to 2.4 GHz. The proposed rectifier has a small area of about 0.19 mm2.\",\"PeriodicalId\":351812,\"journal\":{\"name\":\"2019 7th International Japan-Africa Conference on Electronics, Communications, and Computations, (JAC-ECC)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 7th International Japan-Africa Conference on Electronics, Communications, and Computations, (JAC-ECC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/JAC-ECC48896.2019.9051316\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 7th International Japan-Africa Conference on Electronics, Communications, and Computations, (JAC-ECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/JAC-ECC48896.2019.9051316","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文采用泄漏电流减小技术对传统差动驱动整流器的动态范围进行了增强,解决了输入功率动态范围窄的问题,提高了整流器的输出性能。本设计采用辅助晶体管动态控制整流PMOS器件的电导率,以减小反向漏电流。采用0.18 μm CMOS技术,在402 MHz频率下使用10kΩ负载电阻进行了后布局仿真。与传统整流器的动态范围相比,该整流器将射频输入功率范围提高了约10倍,并将反向漏电流从-98 μA降低到-22 μA。在高输入功率下,它还可以提高输出平均电压。此外,所开发的整流器在高达2.4 GHz的宽带输入频率上表现出良好的性能。所提出的整流器的面积很小,约为0.19 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enhancing Dynamic Range of RF-to-DC Rectifier using Leakage Current Reduction Technique
In this paper, the dynamic range of the conventional differential drive rectifier is enhanced based on leakage current reduction technique, to solve the narrow dynamic range problem of the input power and improve the output rectifier performance. The proposed design uses auxiliary transistors to control the conductivity of the rectifying PMOS devices dynamically to reduce the reverse leakage current. Post layout simulations have been performed using 0.18 μm CMOS technology at 402 MHz with 10kΩ load resistor. The proposed rectifier increases the range of the RF input power about ten times compared to a conventional rectifier's dynamic range and reduces the reverse leakage current from ‒98 μA to ‒22 μA. It also boosts the output average voltage at high input power. In addition, the developed rectifier exhibits good performance over wide band of input frequencies up to 2.4 GHz. The proposed rectifier has a small area of about 0.19 mm2.
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