用于CERN应用的COTS MicroSD存储器的辐射特性

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745717

G. Piscopo, C. McAllister, G. Tsiligiannis, S. Danzeca, A. Masi

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引用次数: 0

摘要

MicroSD卡是一种低成本、简单和快速的方法，可以在嵌入式系统上拥有非易失性存储器。在这项工作中，几个MicroSD卡进行了测试，以测量它们的性能和寿命在质子诱导辐射。MicroSD卡已经进行了测试，以验证它们是否适合用于粒子加速器，如欧洲核子研究中心的大型强子对撞机(LHC)。将介绍每种MicroSD卡的单事件效应(SEE)和总电离剂量(TID)效应。

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Radiation characterization of COTS MicroSD Memories for CERN applications

MicroSD Cards are a low-cost, simple and fast method to have a non-volatile memory on an embedded system. In this work several MicroSD Cards have been tested to measure their performances and life time under proton induced radiation. The MicroSD cards have been tested in order to verify their suitability to be used in a particle accelerator such as the Large Hadron Collider (LHC) at CERN. The Single Event Effects (SEE) and Total Ionizing Dose (TID) effects of each MicroSD Card will be presented.

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来源期刊

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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