一种27/GHz/151 mW GaAs 256/258双模预分频IC，具有0.1 /spl mu/m双层栅极(DDS) E/ d - hjfet

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722645

S. Wada, T. Maeda, M. Tokushima, J. Yamazaki, M. Ishikawa, M. Fujii

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引用次数: 10

摘要

我们开发了基于全干蚀刻工艺的0.1-/spl mu/m双层形(DDS)栅极增强模式(E)和耗尽模式(D)异质结(HJ) FET技术，该技术可在100 GHz以上的E模式和D模式FET中实现高电流增益截止频率(f/sub T/)。我们还报道了首款工作频率在20 GHz以上、功耗低的256/258双模预分频IC。在电源电压为1.2 V时，得到了该预分频器的最大输入频率为27 GHz，功耗为151 mW。这个功耗大约是从预缩放器的报告中推断出的值的1/50。

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A 27/GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1 /spl mu/m double-deck-shaped (DDS) gate E/D-HJFETs

We have developed 0.1-/spl mu/m double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (f/sub T/) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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