三维浮栅NAND闪存的表征

Proceedings of the 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems Pub Date : 2017-06-05 DOI:10.1145/3078505.3078550

Qin Xiong, Fei Wu, Zhonghai Lu, Yue Zhu, You Zhou, Yibing Chu, C. Xie, Ping Huang

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引用次数: 22

摘要

在本文中，我们通过在FPGA平台上的综合实验来表征最先进的3D浮门NAND闪存。然后，我们对性能和可靠性进行了不同的观察，例如操作延迟和各种错误模式。我们相信，通过我们的工作，可以开发出新的3D NAND闪存设计，以实现更好的性能和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterizing 3D Floating Gate NAND Flash

In this paper, we characterize a state-of-the-art 3D floating gate NAND flash memory through comprehensive experiments on an FPGA platform. Then, we present distinct observations on performance and reliability, such as operation latencies and various error patterns. We believe that through our work, novel 3D NAND flash-oriented designs can be developed to achieve better performance and reliability.

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Proceedings of the 2017 ACM SIGMETRICS / International Conference on Measurement and Modeling of Computer Systems

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