利用垂直隧道倍增技术首次证明了SOI隧道场效应管的漏极电流增强

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404355

Y. Morita, T. Mori, S. Migita, W. Mizubayashi, A. Tanabe, K. Fukuda, M. Masahara, H. Ota

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引用次数: 8

摘要

制备了具有垂直隧道倍增特性的CMOS隧道场效应管(tfet)。VTM tfet启动平行于栅极电场的带到带隧道效应(BTBT)，有效地扩展了隧道面积。利用分布单元电路模型分析了VTM的影响，并首次通过实验揭示了漏极电流随隧道面积增大的倍增效应。

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First demonstration of drain current enhancement in SOI tunnel FET with vertical-tunnel-multiplication

CMOS tunnel FETs (TFETs) with vertical-tunnel-multiplication (VTM) were fabricated. VTM TFETs initiate band-to-band tunneling (BTBT) parallel to the gate electric field and effectively extend the tunnel area. Impact of the VTM was analyzed using a distributed-element circuit model, and the drain current multiplication by extended tunnel area was experimentally revealed for the first time.

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来源期刊

2012 IEEE International SOI Conference (SOI)

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