低功耗，高增益LNA拓扑

ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364) Pub Date : 2000-09-14 DOI:10.1109/ICMMT.2000.895710

Choong-Yul Cha, Sang-Gug Lee

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引用次数: 37

摘要

提出了一种新的高增益低噪声放大器拓扑结构。所提出的LNA拓扑结构是一种采用串联级间谐振的电流共享两级级联放大器。将该拓扑结构的性能与现有的高增益放大器进行了定性和定量的比较。给出了基于0.35 /spl mu/m CMOS技术在2.4 GHz下的仿真结果。所提出的拓扑结构在增益和噪声系数方面优于现有的高增益拓扑结构。

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A low power, high gain LNA topology

A novel high gain and low noise amplifier topology is proposed. The proposed LNA topology is a current sharing two-stage cascade amplifier adopting a series inter-stage resonance. The performance of the proposed topology is compared with the existing high gain amplifiers, qualitatively and quantitatively. The simulation results at 2.4 GHz based on 0.35 /spl mu/m CMOS technology are also provided. The proposed topology demonstrates excellence over the existing high gain topologies in gain and noise figure.

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ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)

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