高功率单行程载流子光电二极管

International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301) Pub Date : 1999-11-17 DOI:10.1109/MWP.1999.819655

T. Ishibashi, H. Fushimi, H. Ito, T. Furuta

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引用次数: 22

摘要

讨论了InP-InGaAs utc - pdds的光响应特性及其作为大功率器件的潜力。InGaAs吸收层厚度W/sub - A/为220 nm，收集层损耗层厚度W/sub - C/为300 nm的UTC-PD产生高达184 mA的高脉冲光电流，结面积为40 /spl mu/m/sup 2/时，相关FWHM为4.8 ps。比较了UTC-PD器件与传统引脚pd器件在低偏置下的光射频响应，结果表明UTC-PD器件具有更高的输出能力。

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High power uni-traveling-carrier photodiodes

Photoresponse characteristics of InP-InGaAs UTC-PDs and their potential as high power devices are discussed. A fabricated UTC-PD with an InGaAs absorption-layer thickness W/sub A/ of 220 nm and a collection-layer depletion thickness W/sub C/ of 300 nm yielded high pulse-photocurrent up to 184 mA with an associated FWHM of 4.8 ps for a junction area of 40 /spl mu/m/sup 2/. A comparison of the optical RF response between UTC-PDs and conventional pin PDs has shown higher output capability of the UTC-PD at low bias.

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International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301)

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