{"title":"110 GHz的片上HEMT表征","authors":"R. Anholt, J. Pence, E. Godshalk","doi":"10.1109/GAAS.1994.636941","DOIUrl":null,"url":null,"abstract":"The accuracy of W-band on-wafer S-parameter measurements and direct equivalent-circuit parameter extraction (ECP) techniques for characterizing InP lattice-matched and pHEMTs to 110 GHz is examined. The effects of transverse propagation delays on high-frequency equivalent circuits are discussed. Measurements show that as long as pad capacitances are carefully determined, frequency-independent cold- and hot-FET ECPs can be direct-extracted across the entire frequency band from 1 to 110 GHz, and the derived models can be used to reliably design amplifiers to 110 GHz.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"On-wafer HEMT characterization to 110 GHz\",\"authors\":\"R. Anholt, J. Pence, E. Godshalk\",\"doi\":\"10.1109/GAAS.1994.636941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The accuracy of W-band on-wafer S-parameter measurements and direct equivalent-circuit parameter extraction (ECP) techniques for characterizing InP lattice-matched and pHEMTs to 110 GHz is examined. The effects of transverse propagation delays on high-frequency equivalent circuits are discussed. Measurements show that as long as pad capacitances are carefully determined, frequency-independent cold- and hot-FET ECPs can be direct-extracted across the entire frequency band from 1 to 110 GHz, and the derived models can be used to reliably design amplifiers to 110 GHz.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The accuracy of W-band on-wafer S-parameter measurements and direct equivalent-circuit parameter extraction (ECP) techniques for characterizing InP lattice-matched and pHEMTs to 110 GHz is examined. The effects of transverse propagation delays on high-frequency equivalent circuits are discussed. Measurements show that as long as pad capacitances are carefully determined, frequency-independent cold- and hot-FET ECPs can be direct-extracted across the entire frequency band from 1 to 110 GHz, and the derived models can be used to reliably design amplifiers to 110 GHz.
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