利用SiGeSn合金的动量(k)-空间电荷分离中波红外光电探测器

2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM) Pub Date : 2021-07-01 DOI:10.1109/SUM48717.2021.9505745

Tyler T. McCarthy, Zheng Ju, Shui-Qing Yu, Yong-Hang Zhang

{"title":"利用SiGeSn合金的动量(k)-空间电荷分离中波红外光电探测器","authors":"Tyler T. McCarthy, Zheng Ju, Shui-Qing Yu, Yong-Hang Zhang","doi":"10.1109/SUM48717.2021.9505745","DOIUrl":null,"url":null,"abstract":"We report a band-structure engineering approach with k-space charge-separation feature by tailoring the direct-energy valley to be several kBT higher than the indirect, enabling large absorption coefficients while maintaining long-carrier lifetimes. Modeling shows SiGeSn alloys with constant 3kBTΓ - and L-valley separation cover MWIR range.","PeriodicalId":359978,"journal":{"name":"2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Momentum (k)-Space Charge Separation Mid-Wave Infrared Photodetectors Using SiGeSn Alloys\",\"authors\":\"Tyler T. McCarthy, Zheng Ju, Shui-Qing Yu, Yong-Hang Zhang\",\"doi\":\"10.1109/SUM48717.2021.9505745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a band-structure engineering approach with k-space charge-separation feature by tailoring the direct-energy valley to be several kBT higher than the indirect, enabling large absorption coefficients while maintaining long-carrier lifetimes. Modeling shows SiGeSn alloys with constant 3kBTΓ - and L-valley separation cover MWIR range.\",\"PeriodicalId\":359978,\"journal\":{\"name\":\"2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM)\",\"volume\":\"114 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SUM48717.2021.9505745\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SUM48717.2021.9505745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了一种具有k空间电荷分离特征的带结构工程方法，通过将直接能量谷调整为比间接能量谷高几个kBT，从而在保持长载流子寿命的同时实现大的吸收系数。模型显示，3kBTΓ和l -谷分离恒定的SiGeSn合金覆盖了MWIR范围。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Momentum (k)-Space Charge Separation Mid-Wave Infrared Photodetectors Using SiGeSn Alloys

We report a band-structure engineering approach with k-space charge-separation feature by tailoring the direct-energy valley to be several kBT higher than the indirect, enabling large absorption coefficients while maintaining long-carrier lifetimes. Modeling shows SiGeSn alloys with constant 3kBTΓ - and L-valley separation cover MWIR range.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM)

自引率

0.00%

发文量