超薄ZrO/sub 2/和ZrO/sub x/N/sub y/栅极介质在TaN或多门控NMOSCAP和NMOSFET器件中的比较

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015445

R. Nieh, S. Krishnan, Hag-ju Cho, C. Kang, S. Gopalan, K. Onishi, R. Choi, J.C. Lee

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引用次数: 18

摘要

为了比较ZrO/sub 2/ (ZrO/sub x/N/sub y/)栅极介质(EOT/spl sim/10.3/spl Aring/)，制备了NMOSCAP和自对准NMOSFET器件，并对其进行了表征。与ZrO/sub x/器件相比，ZrO/sub x/N/sub y/器件表现出优异的热稳定性、相当的泄漏电流、更高的击穿场、更小的亚阈值摆幅和更高的驱动电流。制备了多晶硅门控的NMOSCAPs，以研究ZrO/sub x/N/sub y/与聚过程(EOT/spl sim/19/spl Aring/)的相容性，但高泄漏和TEM分析表明，聚与ZrO/sub x/N/sub y/之间存在相互作用。

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Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices

Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO/sub 2/ and nitrogen-incorporated ZrO/sub 2/ (ZrO/sub x/N/sub y/) gate dielectrics (EOT/spl sim/10.3/spl Aring/). ZrO/sub x/N/sub y/ devices demonstrated excellent thermal stability, comparable leakage current, higher breakdown field, decreased subthreshold swing, and improved drive current over ZrO/sub x/ devices. Polysilicon-gated NMOSCAPs were also fabricated to investigate the compatibility of ZrO/sub x/N/sub y/ with the poly process (EOT/spl sim/19/spl Aring/), but high leakage and TEM analysis revealed interaction between the poly and ZrO/sub x/N/sub y/.

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来源期刊

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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