先进Ge和III-V CMOS技术的接触技术方案

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2012-03-14 DOI:10.1109/ICCDCS.2012.6188889

C. Claeys, A. Firrincieli, K. Martens, J. Kittl, E. Simoen

{"title":"先进Ge和III-V CMOS技术的接触技术方案","authors":"C. Claeys, A. Firrincieli, K. Martens, J. Kittl, E. Simoen","doi":"10.1109/ICCDCS.2012.6188889","DOIUrl":null,"url":null,"abstract":"For sub 22 nm technologies the use of both Ge and III-V based devices is extensively investigated because of their promising electrical performances. However, for both types of devices it is of utmost importance to achieve ohmic contacts with a low specific contact resistivity in the order of 1×10-8 Ωcm2 or below. This paper reviews some basic aspects and recent insights in contact technology schemes for both Ge and III-V based technologies.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Contact technology schemes for advanced Ge and III-V CMOS technologies\",\"authors\":\"C. Claeys, A. Firrincieli, K. Martens, J. Kittl, E. Simoen\",\"doi\":\"10.1109/ICCDCS.2012.6188889\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For sub 22 nm technologies the use of both Ge and III-V based devices is extensively investigated because of their promising electrical performances. However, for both types of devices it is of utmost importance to achieve ohmic contacts with a low specific contact resistivity in the order of 1×10-8 Ωcm2 or below. This paper reviews some basic aspects and recent insights in contact technology schemes for both Ge and III-V based technologies.\",\"PeriodicalId\":125743,\"journal\":{\"name\":\"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2012.6188889\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2012.6188889","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

对于22纳米以下的技术，Ge和III-V基器件的使用被广泛研究，因为它们具有良好的电气性能。然而，对于这两种类型的设备来说，最重要的是实现具有1×10-8 Ωcm2或以下顺序的低比接触电阻率的欧姆接触。本文回顾了Ge和III-V基技术的接触技术方案的一些基本方面和最新见解。

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Contact technology schemes for advanced Ge and III-V CMOS technologies

For sub 22 nm technologies the use of both Ge and III-V based devices is extensively investigated because of their promising electrical performances. However, for both types of devices it is of utmost importance to achieve ohmic contacts with a low specific contact resistivity in the order of 1×10-8 Ωcm2 or below. This paper reviews some basic aspects and recent insights in contact technology schemes for both Ge and III-V based technologies.

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来源期刊

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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