SiGe BiCMOS中的低相位噪声单片压控振荡器

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) Pub Date : 2000-06-10 DOI:10.1109/RFIC.2000.854418

J.-M. Mourant, J. Imbornone, T. Tewksbury

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引用次数: 55

摘要

报道了一种采用新颖调谐方案的全集成、低相位噪声、双频压控振荡器(VCO)。使用mosfet实现粗数字调谐，使用PN变容器实现精细模拟调谐。在整个调谐带宽(/spl plusmn/12.5%)下，在3 GHz+25 kHz时测得的相位噪声最大为-95 dBc/Hz，功耗为22.5 mW。据我们所知，这些是迄今为止发表的最好的结果。

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A low phase noise monolithic VCO in SiGe BiCMOS

A fully integrated, low phase noise, dual-band voltage controlled oscillator (VCO) utilizing a novel tuning scheme is reported. Coarse digital tuning is achieved using MOSFETs and fine analog tuning utilizes PN varactors. The measured phase noise is -95 dBc/Hz max at 3 GHz+25 kHz over the whole tuning bandwidth (/spl plusmn/12.5%), and the power dissipated is 22.5 mW. To our knowledge, these are the best results published so far.

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来源期刊

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)

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