有源微波器件参数对微波谐波频率发生器的影响

Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257) Pub Date : 2001-08-14 DOI:10.1109/MWSCAS.2001.986302

J. Johnson, G. Branner, M. Chee

{"title":"有源微波器件参数对微波谐波频率发生器的影响","authors":"J. Johnson, G. Branner, M. Chee","doi":"10.1109/MWSCAS.2001.986302","DOIUrl":null,"url":null,"abstract":"Modern microwave and RF systems are increasingly utilizing internal frequency upconversion techniques. This paper develops improved methods of designing active microwave frequency multipliers utilizing MESFET and HEMT devices. The methods extend and improve the accuracy of classical techniques developed over the past few years.","PeriodicalId":403026,"journal":{"name":"Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effects of active microwave device parameters on microwave harmonic frequency generators\",\"authors\":\"J. Johnson, G. Branner, M. Chee\",\"doi\":\"10.1109/MWSCAS.2001.986302\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Modern microwave and RF systems are increasingly utilizing internal frequency upconversion techniques. This paper develops improved methods of designing active microwave frequency multipliers utilizing MESFET and HEMT devices. The methods extend and improve the accuracy of classical techniques developed over the past few years.\",\"PeriodicalId\":403026,\"journal\":{\"name\":\"Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2001.986302\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2001.986302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

现代微波和射频系统越来越多地利用内部频率上变频技术。本文提出了利用MESFET和HEMT器件设计有源微波倍频器的改进方法。这些方法扩展并提高了过去几年发展起来的经典技术的准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Effects of active microwave device parameters on microwave harmonic frequency generators

Modern microwave and RF systems are increasingly utilizing internal frequency upconversion techniques. This paper develops improved methods of designing active microwave frequency multipliers utilizing MESFET and HEMT devices. The methods extend and improve the accuracy of classical techniques developed over the past few years.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257)

自引率

0.00%

发文量