IGBT栅极驱动电路，内置保护和抗暂态故障

Proceedings of IEEE International Conference on Industrial Technology 2000 (IEEE Cat. No.00TH8482) Pub Date : 2000-01-19 DOI:10.1109/ICIT.2000.854239

B. Majumdar, P. Mukherjee, F. A. Talukdar, S. Biswas

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引用次数: 1

摘要

本文提出了一种用于igbt高效开关的新型栅极驱动电路。该电路包含短路保护方案，通过降低IGBT栅极电压将IGBT故障电流限制在较低的值，从而可以区分瞬态故障和实际故障。除了短路保护外，该电路还可以保护IGBT在过热的情况下。该电路没有任何加速电容器、差动元件或锁存元件，因此对不必要的噪声具有良好的抗扰性。文中给出的示波图证实了该电路的良好运行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IGBT gate drive circuit with in-built protection and immunity to transient fault

A new gate drive circuit for efficient switching of IGBTs has been presented in this paper. This circuit contains a short circuit protection scheme by limiting the IGBT fault current to a lower value through reduction of the IGBT gate voltage and thereby can distinguish a transient from an actual fault. Apart from the short circuit protection, the circuit also protects the IGBT in case of over-temperature. This circuit does not have any speed-up capacitor, differentiating element or latching element, thus giving good immunity towards unwanted noise. The oscillograms presented in this paper confirms satisfactory operation of this circuit.

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Proceedings of IEEE International Conference on Industrial Technology 2000 (IEEE Cat. No.00TH8482)

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