{"title":"SiGe上Ku波段压控振荡器","authors":"J. Torres, J. C. Freire","doi":"10.1109/APCCAS.2008.4746286","DOIUrl":null,"url":null,"abstract":"In this paper the design and test of a monolithic VCO implemented in a 0.25 mum SiGe technology is presented. The oscillator frequency is changing from 12 till 16 GHz when the control voltage changes from 0 to 2 V. The output power is -10 dBm @ 50 Omega. The total power consumption is 40 mW but 70% is to supply the output buffer amplifier. The predicted VCO phase noise, on the 12 GHz to 16 GHz frequency range is changing from -103 dBc/Hz to -82 dBc/Hz at an offset frequency of 1 MHz.","PeriodicalId":344917,"journal":{"name":"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ku band voltage controlled oscillator on SiGe\",\"authors\":\"J. Torres, J. C. Freire\",\"doi\":\"10.1109/APCCAS.2008.4746286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the design and test of a monolithic VCO implemented in a 0.25 mum SiGe technology is presented. The oscillator frequency is changing from 12 till 16 GHz when the control voltage changes from 0 to 2 V. The output power is -10 dBm @ 50 Omega. The total power consumption is 40 mW but 70% is to supply the output buffer amplifier. The predicted VCO phase noise, on the 12 GHz to 16 GHz frequency range is changing from -103 dBc/Hz to -82 dBc/Hz at an offset frequency of 1 MHz.\",\"PeriodicalId\":344917,\"journal\":{\"name\":\"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS.2008.4746286\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2008.4746286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper the design and test of a monolithic VCO implemented in a 0.25 mum SiGe technology is presented. The oscillator frequency is changing from 12 till 16 GHz when the control voltage changes from 0 to 2 V. The output power is -10 dBm @ 50 Omega. The total power consumption is 40 mW but 70% is to supply the output buffer amplifier. The predicted VCO phase noise, on the 12 GHz to 16 GHz frequency range is changing from -103 dBc/Hz to -82 dBc/Hz at an offset frequency of 1 MHz.
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