用扫描MCTS研究了硅双晶中金属杂质的横向分布

IEEE Conference on Photovoltaic Specialists Pub Date : 1990-05-21 DOI:10.1109/PVSC.1990.111712

T. Heiser, A. Mesli, P. Siffert

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引用次数: 1

摘要

引入扫描少数载流子瞬态光谱(SMCTS)作为研究杂质与扩展缺陷相互作用的工具。讨论了最佳工作条件，并给出了样品表面处理对MCTS响应的影响。描述了SMCTS测量的结果。利用SMCTS.>研究了金和铁相关缺陷与晶界的相互作用

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Lateral distribution of metallic impurities in silicon bicrystals investigated by scanning MCTS

Scanning minority carrier transient spectroscopy (SMCTS) is introduced as a tool to study interactions of impurities with extended defects. The optimum working conditions are discussed, and the influence of the sample surface preparation on the MCTS response is shown. Consequences for the SMCTS measurements are described. Gold- and iron-related defect interactions with grain boundaries are investigated by means of SMCTS.<>

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IEEE Conference on Photovoltaic Specialists

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