钨纳米针尖的生长及其场发射特性

C. Kimura, M. Yukawa, H. Aoki, Y. Morihisa, T. Kobayashi, R. Fushimi, S. Hayashi, Jung-Goo Lee, H. Mori, T. Sugino
{"title":"钨纳米针尖的生长及其场发射特性","authors":"C. Kimura, M. Yukawa, H. Aoki, Y. Morihisa, T. Kobayashi, R. Fushimi, S. Hayashi, Jung-Goo Lee, H. Mori, T. Sugino","doi":"10.1109/IVNC.2006.335489","DOIUrl":null,"url":null,"abstract":"Summary form only given. A considerable attention has been paid to development of a nanotip for the electron source and the cantilever of scanning microscopes. A point electron source is strongly desired to improve performance of high-resolution electron beam instruments. A single carbon nanotube (CNT) is expected as one of the most promising materials to achieve a small apex radius of the device. There has been a report on field emission characteristics of the single CNT. This paper describes a novel finding that a single crystalline tungsten nanotip with an apex radius as small as 4.2 nm is grown on the top of the conventional polycrystalline tungsten tip prepared by electrochemical etching. An electron emission current of 1 nA is obtained at an electric field as low as xxx V/mum and an electron emission current as high as 0.1 mA is achieved from a single tungsten nanotip emitter. Tungsten nanotip emitter was fabricated as follows. A conventional tungsten tip with an apex radius of 100 nm was formed by electrochemical etching and was coated with BN film. The BN film was grown by plasma-assisted chemical vapor deposition. Borontrichloride and nitrogen were used as source gases. The growth temperature was fixed at 650degC. The tungsten tip with BN film was set in the high vacuum chamber. DC bias was supplied between the anode electrode and the tungsten tip sample. As a result, it was found that a tungsten nanotip was grown on the conventional tungsten tip though the formation mechanism was not understood yet. It was observed by transmission electron microscope that a single crystalline tungsten nanotip with (110) crystallographic orientation was grown. Field emission characteristics were measured in the chamber evacuated to 1times10-9 torr. The turn-on electric field at an emission current of 1 nA was estimated to be 8.8times10-2 V/mum for the conventional tungsten emitter On the other hand the turn-on electric field was estimated to be as low as 2.6times10-2 V/mum for the tungsten nanotip field emitter. An electron emission current as high as 0.1 mA was achieved. These field emission characteristics of the single tungsten nanotip are comparable with those of the single CNT","PeriodicalId":108834,"journal":{"name":"2006 19th International Vacuum Nanoelectronics Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Growth of Tungsten Nanotip and Its Field Emission Characteristics\",\"authors\":\"C. Kimura, M. Yukawa, H. Aoki, Y. Morihisa, T. Kobayashi, R. Fushimi, S. Hayashi, Jung-Goo Lee, H. Mori, T. Sugino\",\"doi\":\"10.1109/IVNC.2006.335489\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. A considerable attention has been paid to development of a nanotip for the electron source and the cantilever of scanning microscopes. A point electron source is strongly desired to improve performance of high-resolution electron beam instruments. A single carbon nanotube (CNT) is expected as one of the most promising materials to achieve a small apex radius of the device. There has been a report on field emission characteristics of the single CNT. This paper describes a novel finding that a single crystalline tungsten nanotip with an apex radius as small as 4.2 nm is grown on the top of the conventional polycrystalline tungsten tip prepared by electrochemical etching. An electron emission current of 1 nA is obtained at an electric field as low as xxx V/mum and an electron emission current as high as 0.1 mA is achieved from a single tungsten nanotip emitter. Tungsten nanotip emitter was fabricated as follows. A conventional tungsten tip with an apex radius of 100 nm was formed by electrochemical etching and was coated with BN film. The BN film was grown by plasma-assisted chemical vapor deposition. Borontrichloride and nitrogen were used as source gases. The growth temperature was fixed at 650degC. The tungsten tip with BN film was set in the high vacuum chamber. DC bias was supplied between the anode electrode and the tungsten tip sample. As a result, it was found that a tungsten nanotip was grown on the conventional tungsten tip though the formation mechanism was not understood yet. It was observed by transmission electron microscope that a single crystalline tungsten nanotip with (110) crystallographic orientation was grown. Field emission characteristics were measured in the chamber evacuated to 1times10-9 torr. The turn-on electric field at an emission current of 1 nA was estimated to be 8.8times10-2 V/mum for the conventional tungsten emitter On the other hand the turn-on electric field was estimated to be as low as 2.6times10-2 V/mum for the tungsten nanotip field emitter. An electron emission current as high as 0.1 mA was achieved. These field emission characteristics of the single tungsten nanotip are comparable with those of the single CNT\",\"PeriodicalId\":108834,\"journal\":{\"name\":\"2006 19th International Vacuum Nanoelectronics Conference\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 19th International Vacuum Nanoelectronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2006.335489\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 19th International Vacuum Nanoelectronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2006.335489","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

只提供摘要形式。电子源和扫描显微镜悬臂的纳米尖端的研制受到了广泛的关注。点电子源是提高高分辨率电子束仪器性能的迫切需要。单碳纳米管(CNT)有望成为实现小顶点半径器件的最有前途的材料之一。已有关于单碳纳米管场发射特性的报道。本文描述了在电化学刻蚀法制备的传统多晶钨尖上生长出尖端半径小至4.2 nm的单晶钨纳米尖的新发现。在低至xxx V/mum的电场下获得了1na的电子发射电流,而单钨纳米尖发射极的电子发射电流高达0.1 mA。钨纳米尖端发射极的制备方法如下:采用电化学刻蚀法制备了尖端半径为100 nm的常规钨尖,并涂覆了氮化硼薄膜。采用等离子体辅助化学气相沉积法制备了氮化硼薄膜。三氯化硼和氮气被用作源气体。生长温度固定在650℃。在高真空室中制备了BN薄膜的钨尖。在阳极电极和钨尖样品之间提供直流偏压。结果发现,在常规钨尖上生长出了钨纳米尖,但其形成机理尚不清楚。通过透射电镜观察,生长出具有(110)晶向的单晶钨纳米尖。在抽真空至1倍10-9托的腔室中测量了场发射特性。在发射电流为1 nA时,传统钨极发射极的导通电场估计为8.8倍10-2 V/mum,而钨纳米尖场发射极的导通电场估计为2.6倍10-2 V/mum。电子发射电流高达0.1毫安。单钨纳米针尖的场发射特性与单碳纳米管的场发射特性相当
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of Tungsten Nanotip and Its Field Emission Characteristics
Summary form only given. A considerable attention has been paid to development of a nanotip for the electron source and the cantilever of scanning microscopes. A point electron source is strongly desired to improve performance of high-resolution electron beam instruments. A single carbon nanotube (CNT) is expected as one of the most promising materials to achieve a small apex radius of the device. There has been a report on field emission characteristics of the single CNT. This paper describes a novel finding that a single crystalline tungsten nanotip with an apex radius as small as 4.2 nm is grown on the top of the conventional polycrystalline tungsten tip prepared by electrochemical etching. An electron emission current of 1 nA is obtained at an electric field as low as xxx V/mum and an electron emission current as high as 0.1 mA is achieved from a single tungsten nanotip emitter. Tungsten nanotip emitter was fabricated as follows. A conventional tungsten tip with an apex radius of 100 nm was formed by electrochemical etching and was coated with BN film. The BN film was grown by plasma-assisted chemical vapor deposition. Borontrichloride and nitrogen were used as source gases. The growth temperature was fixed at 650degC. The tungsten tip with BN film was set in the high vacuum chamber. DC bias was supplied between the anode electrode and the tungsten tip sample. As a result, it was found that a tungsten nanotip was grown on the conventional tungsten tip though the formation mechanism was not understood yet. It was observed by transmission electron microscope that a single crystalline tungsten nanotip with (110) crystallographic orientation was grown. Field emission characteristics were measured in the chamber evacuated to 1times10-9 torr. The turn-on electric field at an emission current of 1 nA was estimated to be 8.8times10-2 V/mum for the conventional tungsten emitter On the other hand the turn-on electric field was estimated to be as low as 2.6times10-2 V/mum for the tungsten nanotip field emitter. An electron emission current as high as 0.1 mA was achieved. These field emission characteristics of the single tungsten nanotip are comparable with those of the single CNT
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信